PART |
Description |
Maker |
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
SE1450-001 |
SE Series GaAs Infrared Emitting Diode, Metal Can Coaxial Package
|
Honeywell
|
LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
SFH4552 SFH495P Q62702-P5054 Q62703-Q7891 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
Q62703-Q67 LD261 LD261-5 Q62703-Q395 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-114G1 114G1 |
Infrared Emitting Diodes (IRED) GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|